摘要 (Abstract) ：Wide-bandgap (3^rd-generation) and ultra-wide-bandgap (4^th-generation) semiconductors are fundamentally transforming the landscape of power electronics. This talk first explores the frontier of gallium nitride technology, highlighting emerging devices, monolithic integration, and transformative applications ranging from AI processor power delivery to aerospace systems. Subsequently, we will discuss our recent exploration of ultra-wide-bandgap gallium oxide devices for high-temperature high-voltage applications, e.g., pulsed power electronics. Overall, we present coordinated innovations in fundamental device physics, emerging materials, reliability engineering, and advanced packaging to extend the frontier of power electronics.